On the Scaling of Electronic Charge-Storing Memory Down to the Size of Molecules

This paper presents an analysis of the performance impact of scaling present-day micrometer-scale, charge-storing random-access memory (RAM) down to the scale of proposed molecular electronic memory. As a part of this analysis, the likely performance is determined for arrays of molecular-scale memory 10,000 to 100,000 times denser than present-day memory. A combination of classical and quantum mechanical methods are employed to calculate the properties of nanometer-scale devices and memory systems. These calculations suggest that quantum mechanics and other small-scale effects should decrease the capacitance and increase the resistance of molecular-scale circuit components. However, these trends are not pronounced enough to prevent the operation of charge-storing memory on that scale. Some forms of molecular-scale memory built entirely from existing nanometer-scale devices should be able to function nearly as fast as present-day memory.